Control of Coercivities in (Ga,Mn)As Thin Films by Small Concentrations of MnAs Nanoclusters

Details Control of Coercivities in (Ga,Mn)As Thin Films by Small Concentrations of MnAs Nanoclusters Control of Coercivities in (Ga,Mn)As Thin Films by Small Concentrations of MnAs Nanoclusters

2005-12-15

arxiv.org/abs/cond-mat/0512353v1

Applied Physics Letters 88, 022510 (2006)

Physics

Condensed Matter

Materials Science

8 pages,4 figures. accepted for publication in Appl. Phys. Lett

Scientific paper

10.1063/1.2162856

We demonstrate that low concentrations of a secondary magnetic phase in (Ga,Mn)As thin films can enhance the coercivity by factors up to ~100 without significantly degrading the Curie temperature or saturation magnetisation. Magnetic measurements indicate that the secondary phase consists of MnAs nanoclusters, of average size ~7nm. This approach to controlling the coercivity while maintaining high Curie temperature, may be important for realizing ferromagnetic semiconductor based devices.

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