Contactless photoconductivity measurements on (Si) nanowires

Details Contactless photoconductivity measurements on (Si) nanowires Contactless photoconductivity measurements on (Si) nanowires

2009-09-24

arxiv.org/abs/0909.4401v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

Conducting nanowires possess remarkable physical properties unattainable in bulk materials. However our understanding of their transport properties is limited by the difficulty of connecting them electrically. In this Letter we investigate phototransport in both bulk silicon and silicon nanowires using a superconducting multimode resonator operating at frequencies between 0.3 and 3 GHz. We find that whereas the bulk Si response is mainly dissipative, the nanowires exhibit a large dielectric polarizability. This technique is contactless and can be applied to many other semiconducting nanowires and molecules. Our approach also allows to investigate the coupling of electron transport to surface acoustic waves in bulk Si and to electro-mechanical resonances in the nanowires.

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