Contact resistance and shot noise in graphene transistors

Details Contact resistance and shot noise in graphene transistors Contact resistance and shot noise in graphene transistors

2008-10-25

arxiv.org/abs/0810.4568v2

Phys. Rev. B 79, 075428 (2009)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

6 pages, 4 figures; Figs 3 and 4 completed and appendix added

Scientific paper

10.1103/PhysRevB.79.075428

Potential steps naturally develop in graphene near metallic contacts. We
investigate the influence of these steps on the transport in graphene Field
Effect Transistors. We give simple expressions to estimate the
voltage-dependent contribution of the contacts to the total resistance and
noise in the diffusive and ballistic regimes.

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