Connecting the Reentrant Insulating Phase and the Zero Field Metal-Insulator Transition in a 2D Hole System

Physics – Condensed Matter – Strongly Correlated Electrons

Scientific paper

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Scientific paper

10.1103/PhysRevLett.108.106404

We present the transport and capacitance measurements of 10nm wide GaAs quantum wells with hole densities around the critical point of the 2D metal-insulator transition (critical density $p_c$ down to 0.8$\times10^{10}$/cm$^2$, $r_s\sim$36). For metallic hole density $p_c < p

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