Confinement effects and surface-induced charge carriers in Bi Quantum Wires

Details Confinement effects and surface-induced charge carriers in Bi Quantum Wires Confinement effects and surface-induced charge carriers in Bi Quantum Wires

2003-11-05

arxiv.org/abs/cond-mat/0311102v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

15 pages and 3 figures

Scientific paper

10.1063/1.1650038

We present measurements of Shubnikov-de Haas oscillations in arrays of bismuth nanowires with diameters comparable to the Fermi wavelength. For 80-nm wires the hole concentration is less than 30% of that for bulk Bi, consistent with current models of quantum confinement effects. However, 30-nm wires nanowires which are predicted to be a semiconducting show a nearly isotropic short period of 0.025 T-1, consistent with a heavy carrier concentration five times that of bulk Bi. These results are discussed in terms of surface-induced charge carriers in a spherical Fermi surface pocket that are uniformly distributed in the 30-nm nanowire volume and that inhibit the semimetal-to-semiconductor transition.

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