Conductivity of Silicon Inversion Layers: comparison with and without in-plane magnetic field

Details Conductivity of Silicon Inversion Layers: comparison with and without in-plane magnetic field Conductivity of Silicon Inversion Layers: comparison with and without in-plane magnetic field

2004-06-23

arxiv.org/abs/cond-mat/0406566v1

Physics

Condensed Matter

Strongly Correlated Electrons

4 pages, 4 figures

Scientific paper

10.1103/PhysRevB.71.113308

A detailed comparison is presented of the temperature dependence of the conductivity of dilute, strongly interacting electrons in two-dimensional silicon inversion layers in the metallic regime in the presence and in the absence of a magnetic field. We show explicitly and quantitatively that a magnetic field applied parallel to the plane of the electrons reduces the slope of the conductivity versus temperature curves to near zero over a broad range of electron densities extending from $n_c$ to deep in the metallic regime where the high field conductivity is on the order of $10 e^2/h$. The strong suppression (or "quenching") of the metallic behavior by a magnetic field sets an important constraint on theory.

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