Conductivity engineering of graphene by defect formation

Details Conductivity engineering of graphene by defect formation Conductivity engineering of graphene by defect formation

2009-05-08

arxiv.org/abs/0905.1346v1

S H M Jafri et al 2010 J. Phys. D: Appl. Phys. 43 045404 (8pp)

Physics

Condensed Matter

Materials Science

8 pages, 8 figures

Scientific paper

10.1088/0022-3727/43/4/045404

Transport measurements have revealed several exotic electronic properties of graphene. The possibility to influence the electronic structure and hence control the conductivity by adsorption or doping with adatoms is crucial in view of electronics applications. Here, we show that in contrast to expectation, the conductivity of graphene increases with increasing concentration of vacancy defects, by more than one order of magnitude. We obtain a pronounced enhancement of the conductivity after insertion of defects by both quantum mechanical transport calculations as well as experimental studies of carbon nano-sheets. Our finding is attributed to the defect induced mid-gap states, which create a region exhibiting metallic behavior around the vacancy defects. The modification of the conductivity of graphene by the implementation of stable defects is crucial for the creation of electronic junctions in graphene-based electronics devices.

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