Conduction, diffusion and noise of electrons in amorphous chalcogenides at low electric fields

Details Conduction, diffusion and noise of electrons in amorphous chalcogenides at low electric fields Conduction, diffusion and noise of electrons in amorphous chalcogenides at low electric fields

2012-02-16

arxiv.org/abs/1202.3608v2

Physics

Condensed Matter

Materials Science

This paper has been withdrawn by the authors due to misleading interpretation of results

Scientific paper

The low-field electron diffusion, noise, and the conduction in amorphous chalcogenides are investigated by means of a Monte Carlo implementation of a full three- dimensional variable-range hopping transport model between localized states. Quantities like the carrier-velocity autocorrelation function, the noise power spectrum, the diffusion coefficient and the ohmic conductivity are obtained from numerical simulations at room temperatures and lower. Some interesting features of the linear-response regime typical of hopping transport are observed and discussed for the case of the amorphous Ge2Sb2Te5.

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