Conductance Quantization in Schottky-gated Si/SiGe Quantum Point Contacts

Details Conductance Quantization in Schottky-gated Si/SiGe Quantum Point Contacts Conductance Quantization in Schottky-gated Si/SiGe Quantum Point Contacts

2006-09-06

arxiv.org/abs/cond-mat/0609111v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

2 pages, 2 figure, to be published in Proc. ICPS-28

Scientific paper

10.1063/1.2730107

We report on the fabrication and electronic transport characterisation of
Schottky-gated strongly confined Si/SiGe quantum point contacts (QPC). At zero
magnetic field and T=450mK the QPC conductance as a function of gate voltage
shows a quantization in units of e^2/h, indicative of transport through 1D
modes which appear to lack both spin and valley degeneracy.

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