Conductance of the Single Electron Transistor for Arbitrary Tunneling Strength

Details Conductance of the Single Electron Transistor for Arbitrary Tunneling Strength Conductance of the Single Electron Transistor for Arbitrary Tunneling Strength

2000-08-16

arxiv.org/abs/cond-mat/0008231v1

Phys. Rev. B 62, 9955 (2000)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 2 figures

Scientific paper

10.1103/PhysRevB.62.9955

We study the temperature and gate voltage dependence of the conductance of the single electron transistor focusing on highly conducting devices. Electron tunneling is treated nonperturbatively by means of path integral Monte Carlo techniques and the conductance is determined from the Kubo formula. A regularized singular value decomposition scheme is employed to calculate the conductance from imaginary time simulation data. Our findings are shown to bridge between available analytical results in the semiclassical and perturbative limits and are found to explain recent experimental results in a regime not accessible by earlier methods.

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