Conductance of a molecular junction mediated by unconventional metal-induced gap states

Details Conductance of a molecular junction mediated by unconventional metal-induced gap states Conductance of a molecular junction mediated by unconventional metal-induced gap states

2003-01-31

arxiv.org/abs/cond-mat/0301620v1

Europhys. Lett. v62, pp. 90-96 (2003)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

7 pages, 5 figures included; to be published in Europhys. Lett

Scientific paper

10.1209/epl/i2003-00366-3

The conductance of a molecular junction is commonly determined by either charge-transfer-doping, where alignment of the Fermi energy to the molecular levels is achieved, or tunnelling through the tails of molecular resonances within the highest-occupied and lowest-unoccupied molecular-orbital gap. Here, we present an alternative mechanism where electron transport is dominated by electrode surface states. They give rise to metallization of the molecular bridge and additional, pronounced conductance resonances allowing for substantial tailoring of its electronic properties via, e.g. a gate voltage. This is demonstrated in a field-effect geometry of a fullerene-bridge between two metallic carbon nanotubes.

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