Conductance modulation in spin field-efect transistors under finite bias voltages

Details Conductance modulation in spin field-efect transistors under finite bias voltages Conductance modulation in spin field-efect transistors under finite bias voltages

2004-03-08

arxiv.org/abs/cond-mat/0403199v1

Phys. Rev. B 69, 165304 (2004)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

7 pages, 3 figures, to appear in Physical Review B, (April, 2004)

Scientific paper

10.1103/PhysRevB.69.165304

The conductance modulations in spin field-effect transistors under finite bias voltages were studied. It was shown that when a finite bias voltage is applied between two terminals of a spin field-effect transistor, the spin precession states of injected spin-polarized electrons in the semiconductor channel of the device will depend not only the gate-voltage controlled Rashba spin-orbit coupling but also depend on the bias voltage and, hence, the conductance modulation in the device due to Rashba spin-orbit coupling may also depend sensitively on the bias voltage.

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