Conductance fluctuations in graphene devices with superconducting contacts in different charge density regimes

Details Conductance fluctuations in graphene devices with superconducting contacts in different charge density regimes Conductance fluctuations in graphene devices with superconducting contacts in different charge density regimes

2011-08-23

arxiv.org/abs/1108.4599v1

Phys. Status Solidi B (2011)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 figures

Scientific paper

10.1002/pssb.201100326

Conductions fluctuations (CF) are studied in single layer graphene devices with superconducting source and drain contacts made from aluminium. The CF are found to be enhanced by superconductivity by a factor of 1.4 to 2. This (near) doubling of the CF indicates that the phase coherence length is l_phi >= L/2. As compared to previous work, we find a relatively weak dependence of the CF on the gate voltage, and hence on the carrier density. We also demonstrate that whether the CF are larger or smaller at the charge neutrality point can be strongly dependent on the series resistance R_C, which needs to be subtracted.

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