Conductance fluctuations and field asymmetry of rectification in graphene

Details Conductance fluctuations and field asymmetry of rectification in graphene Conductance fluctuations and field asymmetry of rectification in graphene

2009-10-10

arxiv.org/abs/0910.1908v2

Phys. Rev. Lett. 104, 186802 (2010)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

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Scientific paper

We investigate conductance fluctuations as a function of carrier density $n$ and magnetic field in diffusive mesoscopic samples made from monolayer and bilayer graphene. We show that the fluctuations' correlation energy and field, which are functions of the diffusion coefficient, have fundamentally different variations with $n$, illustrating the contrast between massive and massless carriers. The field dependent fluctuations are nearly independent of $n$, but the $n$-dependent fluctuations are not universal and are largest at the charge neutrality point. We also measure the second order conductance fluctuations (mesoscopic rectification). Its field asymmetry, due to electron-electron interaction, decays with conductance, as predicted for diffusive systems.

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