Conductance asymmetry of a slot gate Si-MOSFET in a strong parallel magnetic field

Details Conductance asymmetry of a slot gate Si-MOSFET in a strong parallel magnetic field Conductance asymmetry of a slot gate Si-MOSFET in a strong parallel magnetic field

2009-09-08

arxiv.org/abs/0909.1491v1

Ann. Phys. (Berlin) vol. 18, pp. 913-917 (2009)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 LaTeX pages, 2 figures. Annalen der Physik, in press

Scientific paper

10.1002/andp.200910400

We report measurements on a Si-MOSFET sample with a slot in the upper gate, allowing for different electron densities n_{1,2} across the slot. The dynamic longitudinal resistance was measured by the standard lock-in technique, while maintaining a large DC current through the source-drain channel. We find that the conductance of the sample in a strong parallel magnetic field is asymmetric with respect to the DC current direction. This asymmetry increases with magnetic field. The results are interpreted in terms of electron spin accumulation or depletion near the slot.

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