Condensation of electron-hole pairs in a degenerate semiconductor at room temperature

Details Condensation of electron-hole pairs in a degenerate semiconductor at room temperature Condensation of electron-hole pairs in a degenerate semiconductor at room temperature

2006-03-17

arxiv.org/abs/cond-mat/0603461v1

Physics

Condensed Matter

Strongly Correlated Electrons

26 pages, 5 figures Submitted to Physical Review B

Scientific paper

10.1103/PhysRevB.74.125206

It has been theoretically shown that in large-density semiconductor plasma there exist an energy level of a bound electron-hole pair (a composite boson) at the band gap. Filling this level up occurs through the condensation of electron-hole pairs with the use of mediating photons of a resonant electromagnetic field. We have demonstrated that in the case of a strong degeneracy of the plasma the critical temperature of the condensation is determined by the Fermi energies of the plasma components rather than the order parameter D. The critical temperature can exceed 300 K at electron-hole densities as large as 6.1018 cm-3. The theoretical model is consistent with available experimental data

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