Concentration-dependent mobility in organic field-effect transistors probed by infrared spectromicroscopy of the charge density profile

Details Concentration-dependent mobility in organic field-effect transistors probed by infrared spectromicroscopy of the charge density profile Concentration-dependent mobility in organic field-effect transistors probed by infrared spectromicroscopy of the charge density profile

2007-03-19

arxiv.org/abs/cond-mat/0703497v1

Appl. Phys. Lett. 90, 222108 (2007)

Physics

Condensed Matter

Materials Science

3+ pages, 2 figures

Scientific paper

10.1063/1.2745223

We show that infrared imaging of the charge density profile in organic field-effect transistors (FETs) can probe transport characteristics which are difficult to access by conventional contact-based measurements. Specifically, we carry out experiments and modeling of infrared spectromicroscopy of poly(3-hexylthiophene) (P3HT) FETs in which charge injection is affected by a relatively low resistance of the gate insulators. We conclude that the mobility of P3HT has a power-law density dependence, which is consistent with the activated transport in disorder-induced tails of the density of states.

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