Computer simulation of low-energy excitations in amorphous silicon with voids

Details Computer simulation of low-energy excitations in amorphous silicon with voids Computer simulation of low-energy excitations in amorphous silicon with voids

1999-09-30

arxiv.org/abs/cond-mat/9909457v1

Physics

Condensed Matter

Disordered Systems and Neural Networks

Was presented at ICAMS18 conference, Snowbird UT, August 1999. Submitted to J. of Non-Cryst. Solids

Scientific paper

10.1016/S0022-3093(99)00795-4

We use empirical molecular dynamics technique to study the low-energy vibrations in a large 4096 atom model for pure amorphous silicon and a set of models with voids of different size based on it. Numerical vibrational eigenvalues and eigenvectors for our models are obtained by exact diagonalization of their dynamical matrices. Our calculations show that localized low-energy vibrational excitations of rather complex structure are present in amorphous silicon models with voids. According to their spatial localization patterns we make an attempt to classify these excitations as modes associated with the void and "mixed" modes associated with the interaction of the void with strained regions of silicon network.

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