Compositional tuning of ferromagnetism in Ga1-xMnxP

Details Compositional tuning of ferromagnetism in Ga1-xMnxP Compositional tuning of ferromagnetism in Ga1-xMnxP

2006-08-04

arxiv.org/abs/cond-mat/0608133v1

Physics

Condensed Matter

Materials Science

To be published in Solid State Communications

Scientific paper

10.1016/j.ssc.2006.09.010

We report the magnetic and transport properties of Ga1-xMnxP synthesized via ion implantation followed by pulsed laser melting over a range of x, namely 0.018 to 0.042. Like Ga1-xMnxAs, Ga1-xMnxP displays a monotonic increase of the ferromagnetic Curie temperature with x associated with the hole-mediated ferromagnetic phase while thermal annealing above 300 C leads to a quenching of ferromagnetism that is accompanied by a reduction of the substitutional fraction of Mn. However, contrary to observations in Ga1-xMnxAs, Ga1-xMnxP is non-metallic over the entire composition range. At the lower temperatures over which the films are ferromagnetic, hole transport occurs via hopping conduction in a Mn-derived band; at higher temperatures it arises from holes in the valence band which are thermally excited across an energy gap that shrinks with x.

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