Complex permittivity of a biased superlattice

Details Complex permittivity of a biased superlattice Complex permittivity of a biased superlattice

2007-01-21

arxiv.org/abs/cond-mat/0701503v2

Physics

Condensed Matter

Other Condensed Matter

7 pages, 5 figures

Scientific paper

10.1063/1.2829820

Intersubband response in a superlattice subjected to a homogeneous electric field (biased superlattice with equipopulated levels) is studied within the tight-binding approximation, taking into account the interplay between homogeneous and inhomogeneous mechanisms of broadening. The complex dielectric permittivity is calculated beyond the Born approximation for a wide spectral region. A detectable gain below the resonance is obtained for the low-doped $GaAs$-based biased superlattice in the THz spectral region. Conditions of the stimulated emission regime for metallic and dielectric waveguide structures are discussed.

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