Complete stabilization and improvement of the characteristics of tunnel junctions by thermal annealing

Physics – Condensed Matter – Mesoscale and Nanoscale Physics

Scientific paper

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4 pages, 3 figures

Scientific paper

10.1063/1.2437662

We have observed that submicron sized Al--AlO{$_x$}--Al tunnel junctions can be stabilized completely by annealing them in vacuum at temperatures between $350^{\circ}$C and $450^{\circ}$C. In addition, low temperature characterization of the samples after the annealing treatment showed a marked improvement of the tunneling characteristics due to disappearance of unwanted resonances in the current. Charging energy, tunneling resistance, barrier thickness and height all increase after the treatment. The superconducting gap is not affected, but supercurrent is reduced in accordance with the increase of tunneling resistance.

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