Complete spin polarization of degenerate electrons in semiconductors near ferromagnetic contacts

Details Complete spin polarization of degenerate electrons in semiconductors near ferromagnetic contacts Complete spin polarization of degenerate electrons in semiconductors near ferromagnetic contacts

2006-09-22

arxiv.org/abs/cond-mat/0609599v1

Physics

Condensed Matter

Other Condensed Matter

Scientific paper

We show that spin polarization of electron density in nonmagnetic degenerate semiconductors can achieve 100%. This effect is realized in ferromagnet-semiconductor $FM-n^{+}$-$n$ junctions even at moderate spin selectivity of the $FM-n^{+}$ contact when the electrons are extracted from the heavily doped $n^{+}-$semiconductor into the ferromagnet. We derived a general equation relating spin polarization of the current to that of the electron density in nonmagnetic semiconductors. We found that the effect of the complete spin polarization is achieved near $n^{+}$-$n$ interface when an effective diffusion coefficient goes to zero in this region while the diffusion current remains finite.

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