Competition between weak localization and antilocalization in topological surface states

Details Competition between weak localization and antilocalization in topological surface states Competition between weak localization and antilocalization in topological surface states

2011-01-28

arxiv.org/abs/1101.5437v3

Phys. Rev. Lett. 107, 076801 (2011)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 pages, 4 figures

Scientific paper

10.1103/PhysRevLett.107.076801

A magnetoconductivity formula is presented for the surface states of a magnetically doped topological insulator. It reveals a competing effect of weak localization and weak antilocalization in quantum transport when an energy gap is opened at the Dirac point by magnetic doping. It is found that, while random magnetic scattering always drives the system from the symplectic to the unitary class, the gap could induce a crossover from weak antilocalization to weak localization, tunable by the Fermi energy or the gap. This crossover presents a unique feature characterizing the surface states of a topological insulator with the gap opened at the Dirac point in the quantum diffusion regime.

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