Competition between the Mott transition and the Anderson localization in 1D disordered interacting electron systems

Details Competition between the Mott transition and the Anderson localization in 1D disordered interacting electron systems Competition between the Mott transition and the Anderson localization in 1D disordered interacting electron systems

1996-09-02

arxiv.org/abs/cond-mat/9609011v2

Physics

Condensed Matter

4 pages, Revtex, figures included, to appear in Phys. Rev. B (Rapid Communication)

Scientific paper

10.1103/PhysRevB.54.R11018

The competition between the Mott transition and the Anderson localization in one dimensional electron systems is studied based upon the bosonization and the renormalization group method. The beta function is calculated up to the second order in the strength of diagonal disorder by using a replica trick. It is found that the sufficiently strong forward scattering by random impurities destroys the Mott-Hubbard gap, and the backward scattering gives rise to the Anderson localization for the resulting gapless state. On the other hand, if the Umklapp interaction is strong enough, the Mott insulating state still overwhelms the Anderson localization.

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