Physics – Condensed Matter – Materials Science
Scientific paper
2010-10-07
Appl. Phys. Lett. 98, 012103 (2011)
Physics
Condensed Matter
Materials Science
3 pages, 3 figures; accepted for publication in Applied Physics Letters
Scientific paper
10.1063/1.3535957
We demonstrate the control of the hole concentration in Ga1-xMnxP over a wide range by introducing compensating vacancies. The resulting evolution of the Curie temperature from 51 K to 7.5 K is remarkably similar to that observed in Ga1-xMnxAs despite the dramatically different character of hole transport between the two material systems. The highly localized nature of holes in Ga1-xMnxP is reflected in the accompanying increase in resistivity by many orders of magnitude. Based on variable-temperature resistivity data we present a general picture for hole conduction in which variable-range hopping is the dominant transport mechanism in the presence of compensation.
Bonanni Alberta
Dubon Oscar D.
Li Tiancheng
Stone Remington P.
Winkler T. E.
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