Comparison of two methods for describing the strain profiles in quantum dots

Details Comparison of two methods for describing the strain profiles in quantum dots Comparison of two methods for describing the strain profiles in quantum dots

1997-11-13

arxiv.org/abs/cond-mat/9711126v1

Physics

Condensed Matter

Materials Science

To appear in J. Appl. Physics

Scientific paper

10.1063/1.366631

The electronic structure of interfaces between lattice-mismatched semiconductor is sensitive to the strain. We compare two approaches for calculating such inhomogeneous strain -- continuum elasticity (CE, treated as a finite difference problem) and atomistic elasticity (AE). While for small strain the two methods must agree, for the large strains that exist between lattice-mismatched III-V semiconductors (e.g. 7% for InAs/GaAs outside the linearity regime of CE) there are discrepancies. We compare the strain profile obtained by both approaches (including the approximation of the correct C_2 symmetry by the C_4 symmetry in the CE method), when applied to C_2-symmetric InAs pyramidal dots capped by GaAs.

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