Compact silicon double and triple dots realized with only two gates

Details Compact silicon double and triple dots realized with only two gates Compact silicon double and triple dots realized with only two gates

2010-05-31

arxiv.org/abs/1005.5686v1

Applied Physics Letters 95, 242107 (2009)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

3 pages, 4 figures

Scientific paper

10.1063/1.3273857

We report electronic transport on silicon double and triple dots created with the optimized number of two gates. Using silicon nitride spacers two dots in series are created below two top gates overlapping a silicon nanowire. Coupling between dots is controlled by gate voltages. A third dot is created either by combined action of gate voltages or local doping depending on the spacers length. The main characteristics of the triple dot stability diagram are quantitatively fitted.

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