Compact and explicit physical model for lateral metal-oxide-semiconductor field-effect transistor with nanoelectromechanical system based resonant gate

Details Compact and explicit physical model for lateral metal-oxide-semiconductor field-effect transistor with nanoelectromechanical system based resonant gate Compact and explicit physical model for lateral metal-oxide-semiconductor field-effect transistor with nanoelectromechanical system based resonant gate

2010-01-13

arxiv.org/abs/1001.2148v1

Applied Physics Letters 92 (2008) 174106

Physics

Condensed Matter

Materials Science

Scientific paper

We propose a simple analytical model of a metal-oxide-semiconductor field-effect transistor with a lateral resonant gate based on the coupled electromechanical equations, which are self-consistently solved in time. All charge densities according to the mechanical oscillations are evaluated. The only input parameters are the physical characteristics of the device. No extra mathematical parameters are used to fit the experimental results. Theoretical results are in good agreement with the experimental data in static and dynamic operation. Our model is comprehensive and may be suitable for any electromechanical device based on the field-effect transduction.

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