Comments on "Spin-dependent tunneling through a symmetric semiconductor barrier: The Dresselhaus effect"

Details Comments on "Spin-dependent tunneling through a symmetric semiconductor barrier: The Dresselhaus effect" Comments on "Spin-dependent tunneling through a symmetric semiconductor barrier: The Dresselhaus effect"

2010-04-07

arxiv.org/abs/1004.1019v1

Phys. Rev. B 76, 197301 (2007)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

2 pages

Scientific paper

10.1103/PhysRevB.76.197301

In a recent paper [Phys. Rev. B 72, 153314 (2005)], the $k^{3}$-Dresselhaus term in the contacts and the full form of the current operator are considered for spin-dependent tunneling through a symmetric barrier. The authors found that the full form of the current operator has a much larger influence on the spin polarization than it was initially thought. In this Comment we will show that their treatment of the other problem, the $k^{3}$-Dresselhaus term in the contacts, is incorrect. Their proposed solution in the contacts simply does not obey the Schr\"{o}dinger equation. In this context we also comment on the definition and the suitability of spin polarization in contacts with spin-orbit coupling.

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