Comments on "Quasiparticle self-consistent GW theory of III-V nitride semiconductors: Bands, Gap bowing, and effective masses"

Details Comments on "Quasiparticle self-consistent GW theory of III-V nitride semiconductors: Bands, Gap bowing, and effective masses" Comments on "Quasiparticle self-consistent GW theory of III-V nitride semiconductors: Bands, Gap bowing, and effective masses"

2011-01-27

arxiv.org/abs/1101.5329v1

Physics

Condensed Matter

Materials Science

Scientific paper

An oversight of several previous results from local density approximation (LDA) calculations appear to have led to an incomplete, and hence misleading, characterization of the capability of density functional theory (DFT) to describe correctly the electronic properties of wurtzite GaN (w-GaN) and InN (w-InN) [Phys. Rev. B 82, 115102 (2010)]. These comments are aimed at presenting a different picture of the above capability for DFT calculations that solve self-consistently the system of equations of DFT. They also underscore, in light of the experimentally established Burstein-Moss effect, the need to specify the carrier density when citing a band gap for w-InN.

Affiliated with

Also associated with

No associations

Rating

Comments on "Quasiparticle self-consistent GW theory of III-V nitride semiconductors: Bands, Gap bowing, and effective masses" does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Comments on "Quasiparticle self-consistent GW theory of III-V nitride semiconductors: Bands, Gap bowing, and effective masses", we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Comments on "Quasiparticle self-consistent GW theory of III-V nitride semiconductors: Bands, Gap bowing, and effective masses" will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-545711