Comment on "Tunable Band Gaps in Bilayer Graphene-BN Heterostructures"

Details Comment on "Tunable Band Gaps in Bilayer Graphene-BN Heterostructures" Comment on "Tunable Band Gaps in Bilayer Graphene-BN Heterostructures"

2010-12-10

arxiv.org/abs/1012.2379v1

Physics

Condensed Matter

Materials Science

Scientific paper

We study the electronic properties of h-BN/graphene/h-BN ABC-stacked trilayer
systems using tight binding and DFT methods. We comment on the recent work of
Ramasubramaniam et al. (arxiv:1011.2489) whose results seem to be in
disagreement with our recent calculations. Detailed analysis reaffirms our
previous conclusions.

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