Comment on ``Topological Oscillations of the Magnetoconductance in Disordered GaAs Layers''

Details Comment on ``Topological Oscillations of the Magnetoconductance in Disordered GaAs Layers'' Comment on ``Topological Oscillations of the Magnetoconductance in Disordered GaAs Layers''

2005-04-28

arxiv.org/abs/cond-mat/0504763v1

Phys. Rev. Lett. 95, 189701 (2005)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

comment on Phys. Rev. Lett., vol. 92, 016802 (2004)

Scientific paper

10.1103/PhysRevLett.95.189701

In a recent Letter, Murzin et. al. [Phys. Rev. Lett., vol. 92, 016802 (2004)] investigated "instanton effects" in the magneto resistance data taken from samples with heavily Si-doped GaAs layers at low temperatures. This topological issue originally arose in the development of a microscopic theory of quantum Hall effect some 20 years ago. The investigations by Murzin et. al., however, do not convey the correct ideas on scaling that have emerged over the years in the general theory of quantum transport.

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