Comment on "Shallow donor states near a semiconductor-insulator-metal interface"

Details Comment on "Shallow donor states near a semiconductor-insulator-metal interface" Comment on "Shallow donor states near a semiconductor-insulator-metal interface"

2011-04-18

arxiv.org/abs/1104.3467v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

2 pages, 2 tables

Scientific paper

In a recent paper Hao et al. [Phys. Rev. B 80, 035329 (2009)] reported variational calculations of energy spectrum for shallow hydrogenic donor in the structure of semiconductor/insulator/metal with a new type of trial wave function. They also performed calculations for semiconductor/insulator system and found that their method gives energy values lower than those obtained by MacMillen and Landman [Phys. Rev. B 29, 4524 (1984)]. As follows from these results MacMillen and Landman have got much larger errors in energy values than they expected. However we confirm that the theoretical approach suggested by MacMillen and Landman gives rather accurate energy values for the system of hydrogenic donor near the interface between semiconductor and insulator.

Affiliated with

Also associated with

No associations

Rating

Comment on "Shallow donor states near a semiconductor-insulator-metal interface" does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Comment on "Shallow donor states near a semiconductor-insulator-metal interface", we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Comment on "Shallow donor states near a semiconductor-insulator-metal interface" will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-72088