Comment on "Reconciling results of tunnelling experiments on (Ga,Mn)As" arXiv:1102.3267v2 by Dietl and Sztenkiel

Details Comment on "Reconciling results of tunnelling experiments on (Ga,Mn)As" arXiv:1102.3267v2 by Dietl and Sztenkiel Comment on "Reconciling results of tunnelling experiments on (Ga,Mn)As" arXiv:1102.3267v2 by Dietl and Sztenkiel

2011-02-22

arxiv.org/abs/1102.4459v3

Physics

Condensed Matter

Materials Science

5 pages, 2 figures

Scientific paper

We comment on the recent paper "Reconciling results of tunnelling experiments on (Ga,Mn)As" arXiv:1102.3267v2 by Dietl and Sztenkiel. They claimed that the oscillations observed in the d2I/dV2-V characteristics in our studies on the resonant tunneling spectroscopy on GaMnAs, are not attributed to the resonant levels in the GaMnAs layer but to the two-dimensional interfacial subbands in the GaAs:Be layer. Here, we show that this interpretation is not able to explain our experimental results and our conclusions remain unchanged.

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