Comment on "Observation of Spin Injection at a Ferromagnet-Semiconductor Interface, by P.R. Hammar et al

Details Comment on "Observation of Spin Injection at a Ferromagnet-Semiconductor Interface, by P.R. Hammar et al Comment on "Observation of Spin Injection at a Ferromagnet-Semiconductor Interface, by P.R. Hammar et al

2000-01-13

arxiv.org/abs/cond-mat/0001187v1

Physics

Condensed Matter

accepted for PRL, 1 page

Scientific paper

10.1103/PhysRevLett.84.5023

In a recent Letter Hammar et al. claim the observation of injection of a spin-polarized current in a two-dimensional electron gas (2DEG). This is an important observation, since, despite considerable effort of several groups, all attempts to realize spin-injection into a 2DEG using purely electrical measurements have failed sofar. However, in my opinion the claim made is not correct, and the observed behaviour can be explained by a combination of a magneto resistance (Hall) effect (e.g. generated by the fringe magnetic fields present at the edges of the ferromagnetic electrode), with a {\it spin-independent} rectification effect due to the presence of a metal- semiconductor junction.

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