Comment on "Memory Effects in an Interacting Magnetic Nanoparticle System" by Sun et. al, prl, 91, 167206 (2003)

Details Comment on "Memory Effects in an Interacting Magnetic Nanoparticle System" by Sun et. al, prl, 91, 167206 (2003) Comment on "Memory Effects in an Interacting Magnetic Nanoparticle System" by Sun et. al, prl, 91, 167206 (2003)

2004-03-23

arxiv.org/abs/cond-mat/0403574v1

Physics

Condensed Matter

Materials Science

Scientific paper

In this Comment we report a phenomenon identical to that observed in ({Y. Sun, M. B. Salamon, K. Garnier and R. S. Averback, Phys. Rev. Lett. 91, 167206 (2003)}) for systems of NiFe{$_2$}O{$_4$} particles (mean size $\approx$ 3nm) embedded in a SiO{$_2$} matrix with two different interparticle spacings 4 nm (1) and 15 nm (2), which controls the strength of the dipolar interactions. Not only do we find the memory effect to be present in the non-interacting sample (2), indeed we find it to be {\em more} prominent than in the interacting case (1). We demonstrate that this effect can be simply attributed to a superposition of relaxation times of two sets of particles.

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