Comment on "Charged impurity scattering limited low temperature resistivity of low density silicon inversion layers" (Das Sarma and Hwang, cond-mat/9812216)

Details Comment on "Charged impurity scattering limited low temperature resistivity of low density silicon inversion layers" (Das Sarma and Hwang, cond-mat/9812216) Comment on "Charged impurity scattering limited low temperature resistivity of low density silicon inversion layers" (Das Sarma and Hwang, cond-mat/9812216)

1998-12-20

arxiv.org/abs/cond-mat/9812331v1

Physics

Condensed Matter

Strongly Correlated Electrons

1 page, LaTeX file

Scientific paper

In a recent preprint cond-mat/9812216, Das Sarma and Hwang propose an
explanation of the sharp decrease in resistivity at low temperatures which has
been attributed to a transition to an unexpected conducting phase in dilute
high-mobility two-dimensional systems at B=0. In this Comment, we examine
whether their model is supported by the available experimental data.

Affiliated with

Also associated with

No associations

Rating

Comment on "Charged impurity scattering limited low temperature resistivity of low density silicon inversion layers" (Das Sarma and Hwang, cond-mat/9812216) does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Comment on "Charged impurity scattering limited low temperature resistivity of low density silicon inversion layers" (Das Sarma and Hwang, cond-mat/9812216), we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Comment on "Charged impurity scattering limited low temperature resistivity of low density silicon inversion layers" (Das Sarma and Hwang, cond-mat/9812216) will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-262125