Combining half-metals and multiferroics into epitaxial heterostructures for spintronics

Details Combining half-metals and multiferroics into epitaxial heterostructures for spintronics Combining half-metals and multiferroics into epitaxial heterostructures for spintronics

2005-10-24

arxiv.org/abs/cond-mat/0510625v1

Physics

Condensed Matter

Materials Science

Scientific paper

10.1063/1.2170432

We report on the growth of epitaxial bilayers of the La2/3Sr1/3MnO3 (LSMO) half-metallic ferromagnet and the BiFeO3 (BFO) multiferroic, on SrTiO3(001) by pulsed laser deposition. The growth mode of both layers is two-dimensional, which results in unit-cell smooth surfaces. We show that both materials keep their properties inside the heterostructures, i.e. the LSMO layer (11 nm thick) is ferromagnetic with a Curie temperature of ~330K, while the BFO films shows ferroelectricity down to very low thicknesses (5 nm). Conductive-tip atomic force microscope mappings of BFO/LSMO bilayers for different BFO thicknesses reveal a high and homogeneous resistive state for the BFO film that can thus be used as a ferroelectric tunnel barrier in tunnel junctions based on a half-metal.

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