Colossal Positive Magnetoresistance in a Doped Nearly Magnetic Semiconductor

Details Colossal Positive Magnetoresistance in a Doped Nearly Magnetic Semiconductor Colossal Positive Magnetoresistance in a Doped Nearly Magnetic Semiconductor

2008-01-09

arxiv.org/abs/0801.1354v1

Physics

Condensed Matter

Strongly Correlated Electrons

5 pages, 5 figures

Scientific paper

10.1103/PhysRevB.77.085212

We report on a positive colossal magnetoresistance (MR) induced by
metallization of FeSb$_{2}$, a nearly magnetic or "Kondo" semiconductor with 3d
ions. We discuss contribution of orbital MR and quantum interference to
enhanced magnetic field response of electrical resistivity.

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