Coherent Tunneling between Elementary Conducting Layers in the NbSe$_3$ Charge-Density-Wave Conductor

Details Coherent Tunneling between Elementary Conducting Layers in the NbSe$_3$ Charge-Density-Wave Conductor Coherent Tunneling between Elementary Conducting Layers in the NbSe$_3$ Charge-Density-Wave Conductor

2002-04-26

arxiv.org/abs/cond-mat/0204581v2

JETP Letters, Vol. 75, No. 2, 2002, pp. 93-97

Physics

Condensed Matter

Superconductivity

11 pages including 5 figures

Scientific paper

10.1134/1.1466484

Characteristic features of transverse transport along the $a^*$ axis in the NbSe$_3$ charge-density-wave conductor are studied. At low temperatures, the $I$-$V$ characteristics of both layered structures and NbSe$_3$-NbSe$_3$ point contacts exhibit a strong peak of dynamic conductivity at zero bias voltage. In addition, the $I$-$V$ characteristics of layered structures exhibit a series of peaks that occur at voltages equal to multiples of the double Peierls gap. The conductivity behavior observed in the experiment resembles that reported for the interlayer tunneling in Bi-2212 high-$T_c$ superconductors. The conductivity peak at zero bias is explained using the model of almost coherent interlayer tunneling of the charge carriers that are not condensed in the charge density wave.

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