Coherent transport in homojunction between excitonic insulator and semimetal

Details Coherent transport in homojunction between excitonic insulator and semimetal Coherent transport in homojunction between excitonic insulator and semimetal

2005-04-05

arxiv.org/abs/cond-mat/0504121v1

Physical Review Letters 94, 186404 (2005).

Physics

Condensed Matter

Strongly Correlated Electrons

RevTeX 4.0, 13 pages, 5 b/w figures, 1 colour figure, 1 table. Version modified with respect to the original, which will appea

Scientific paper

10.1103/PhysRevLett.94.186404

From the solution of a two-band model, we predict that the thermal and electrical transport across the junction of a semimetal and an excitonic insulator will exhibit high resistance behavior and low entropy production at low temperatures, distinct from a junction of a semimetal and a normal semiconductor. This phenomenon, ascribed to the dissipationless exciton flow which dominates over the charge transport, is based on the much longer length scale of the change of the effective interface potential for electron scattering due to the coherence of the condensate than in the normal state.

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