Coherent spin transport through a 350-micron-thick Silicon wafer

Details Coherent spin transport through a 350-micron-thick Silicon wafer Coherent spin transport through a 350-micron-thick Silicon wafer

2007-06-06

arxiv.org/abs/0706.0866v3

Phys. Rev. Lett. 99, 177209 (2007)

Physics

Condensed Matter

Materials Science

Accepted in PRL

Scientific paper

10.1103/PhysRevLett.99.177209

We use all-electrical methods to inject, transport, and detect spin-polarized electrons vertically through a 350-micron-thick undoped single-crystal silicon wafer. Spin precession measurements in a perpendicular magnetic field at different accelerating electric fields reveal high spin coherence with at least 13pi precession angles. The magnetic-field spacing of precession extrema are used to determine the injector-to-detector electron transit time. These transit time values are associated with output magnetocurrent changes (from in-plane spin-valve measurements), which are proportional to final spin polarization. Fitting the results to a simple exponential spin-decay model yields a conduction electron spin lifetime (T1) lower bound in silicon of over 500ns at 60K.

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