Coherent Heteroepitaxy of Bi2Se3 on GaAs (111)B

Details Coherent Heteroepitaxy of Bi2Se3 on GaAs (111)B Coherent Heteroepitaxy of Bi2Se3 on GaAs (111)B

2010-12-09

arxiv.org/abs/1012.1918v1

Applied Physics Letters 97, 262104 (2010)

Physics

Condensed Matter

Materials Science

To appear in Applied Physics Letters

Scientific paper

10.1063/1.3532845

We report the heteroepitaxy of single crystal thin films of Bi2Se3 on the (111)B surface of GaAs by molecular beam epitaxy. We find that Bi2Se3 grows highly c-axis oriented, with an atomically sharp interface with the GaAs substrate. By optimizing the growth of a very thin GaAs buffer layer before growing the Bi2Se3, we demonstrate the growth of thin films with atomically flat terraces over hundreds of nanometers. Initial time-resolved Kerr rotation measurements herald opportunities for probing coherent spin dynamics at the interface between a candidate topological insulator and a large class of GaAs-based heterostructures.

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