Coherent Ferroelectric Switching by Atomic Force Microscopy

Details Coherent Ferroelectric Switching by Atomic Force Microscopy Coherent Ferroelectric Switching by Atomic Force Microscopy

2004-01-19

arxiv.org/abs/cond-mat/0401333v1

Physics

Condensed Matter

Materials Science

13 pages, 3 figures

Scientific paper

10.1103/PhysRevB.71.132102

General energy approaches have been applied to study the single-domain polarization reversal induced by the voltage-modulated Atomic Force Microscopy (AFM) in ferroelectric single crystals and thin films. Topographic analysis of energy surfaces in the subspace of domain dimensions is performed, and energy evolutions under an external bias are elucidated. This has let to successfully describe all stages of the AFM switching, including formations of a reversed domain, its growth in a bulk, domain contact instabilities near an electrode, and pure sidewise expansions in a film.

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