Coherent electrical rotations of valley states in Si quantum dots using the phase of the valley-orbit coupling

Details Coherent electrical rotations of valley states in Si quantum dots using the phase of the valley-orbit coupling Coherent electrical rotations of valley states in Si quantum dots using the phase of the valley-orbit coupling

2012-04-10

arxiv.org/abs/1204.2267v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

10 pages, 2 figures

Scientific paper

A gate electric field has a small but non-negligible effect on the phase of the valley-orbit coupling in Si quantum dots. Finite interdot tunneling between valley eigenstates in a double quantum dot is enabled by a small difference in the phase of the valley-orbit coupling between the two dots, and it in turn allows controllable rotations of two-dot valley eigenstates at a level anticrossing. We present a comprehensive analytical discussion of this process, with estimates for realistic structures.

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