Coexisting Holes and Electrons in High-Tc Materials: Implications from Normal State Transport

Details Coexisting Holes and Electrons in High-Tc Materials: Implications from Normal State Transport Coexisting Holes and Electrons in High-Tc Materials: Implications from Normal State Transport

2012-02-08

arxiv.org/abs/1202.1792v1

Philos. Mag. 91, 818 (2011)

Physics

Condensed Matter

Superconductivity

22 pages, 7 figures, 4 tables and 78 references

Scientific paper

10.1080/14786435.2010.527864

Normal state resistivity and Hall effect are shown to be successfully modeled by a two-band model of holes and electrons that is applied self-consistently to (i) DC transport data reported for eight bulk-crystal and six oriented-film specimens of YBa2Cu3O7-{\delta}, and (ii) far-infrared Hall angle data reported for YBa2Cu3O7-{\delta} and Bi2Sr2CaCu2O8+{\delta}. The electron band exhibits extremely strong scattering; the extrapolated DC residual resistivity of the electronic component is shown to be consistent with the previously observed excess thermal conductivity and excess electrodynamic conductivity at low temperature. Two-band hole-electron analysis of Hall angle data suggest that the electrons possess the greater effective mass.

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