Coexistence of Weak Localization and a Metallic Phase in Si/SiGe Quantum Wells

Details Coexistence of Weak Localization and a Metallic Phase in Si/SiGe Quantum Wells Coexistence of Weak Localization and a Metallic Phase in Si/SiGe Quantum Wells

1999-10-15

arxiv.org/abs/cond-mat/9910228v1

Phys.Rev.B 61, R5082 (2000)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 3 figures

Scientific paper

10.1103/PhysRevB.61.R5082

Magnetoresistivity measurements on p-type Si/SiGe quantum wells reveal the coexistence of a metallic behavior and weak localization. Deep in the metallic regime, pronounced weak localization reduces the metallic behavior around zero magnetic field without destroying it. In the insulating phase, a positive magnetoresistivity emerges close to B=0, possibly related to spin-orbit interactions.

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