Coexistence of electron and hole transport in graphene

Details Coexistence of electron and hole transport in graphene Coexistence of electron and hole transport in graphene

2011-07-20

arxiv.org/abs/1107.3929v2

Phys. Rev. B 84, 115314 (2011)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 pages, 6 figures

Scientific paper

10.1103/PhysRevB.84.115314

When sweeping the carrier concentration in monolayer graphene through the charge neutrality point, the experimentally measured Hall resistivity shows a smooth zero crossing. Using a two- component model of coexisting electrons and holes around the charge neutrality point, we unambiguously show that both types of carriers are simultaneously present. For high magnetic fields up to 30 T the electron and hole concentrations at the charge neutrality point increase with the degeneracy of the zero-energy Landau level which implies a quantum Hall metal state at \nu=0 made up by both electrons and holes.

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