Coercive Field and Magnetization Deficit in Ga(1-x)Mn(x)As Epilayers

Details Coercive Field and Magnetization Deficit in Ga(1-x)Mn(x)As Epilayers Coercive Field and Magnetization Deficit in Ga(1-x)Mn(x)As Epilayers

2002-12-11

arxiv.org/abs/cond-mat/0212260v1

J. Appl. Phys. 93, 6784 (2003)

Physics

Condensed Matter

15 total pages -- 5 text, 1 table, 4 figues. Accepted for publication in MMM 2002 conference proceedings (APL)

Scientific paper

10.1063/1.1556109

We have studied the field dependence of the magnetization in epilayers of the diluted magnetic semiconductor Ga(1-x)Mn(x)As for 0.0135 < x < 0.083. Measurements of the low temperature magnetization in fields up to 3 T show a significant deficit in the total moment below that expected for full saturation of all the Mn spins. These results suggest that the spin state of the non-ferromagnetic Mn spins is energetically well separated from the ferromagnetism of the bulk of the spins. We have also studied the coercive field (Hc) as a function of temperature and Mn concentration, finding that Hc decreases with increasing Mn concentration as predicted theoretically.

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