Coaxial p- and n-type carbon nanotube transistors with dopant-selective coatings

Physics – Condensed Matter – Mesoscale and Nanoscale Physics

Scientific paper

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

12 pages, 3 figures

Scientific paper

Carbon nanotube field-effect transistors (FETs) with passivated coaxial gate structures have been fabricated after growth of contacted suspended single wall nanotubes (SWNTs) and subsequent coating with gate dielectrics. Electron Fabry-Perot interferences are observed in the FETs indicating ballistic transport in the coated structures. Reliable production of high-performance SWNT FETs has been obtained by combining patterned growth of SWNT arrays with feed-back controlled electrical breakdown to select desired semiconducting SWNTs, making large-scale SWNT FET fabrication achievable. P-type and n-type passivated SWNT FETs have been realized through dopant-selective nanotube coatings, which enables the fabrication of active circuits based on complementary device structures.

No associations

LandOfFree

Say what you really think

Search LandOfFree.com for scientists and scientific papers. Rate them and share your experience with other people.

Rating

Coaxial p- and n-type carbon nanotube transistors with dopant-selective coatings does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Coaxial p- and n-type carbon nanotube transistors with dopant-selective coatings, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Coaxial p- and n-type carbon nanotube transistors with dopant-selective coatings will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFWR-SCP-O-404726

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.