Physics – Condensed Matter – Mesoscale and Nanoscale Physics
Scientific paper
2005-08-29
Physics
Condensed Matter
Mesoscale and Nanoscale Physics
12 pages, 3 figures
Scientific paper
Carbon nanotube field-effect transistors (FETs) with passivated coaxial gate structures have been fabricated after growth of contacted suspended single wall nanotubes (SWNTs) and subsequent coating with gate dielectrics. Electron Fabry-Perot interferences are observed in the FETs indicating ballistic transport in the coated structures. Reliable production of high-performance SWNT FETs has been obtained by combining patterned growth of SWNT arrays with feed-back controlled electrical breakdown to select desired semiconducting SWNTs, making large-scale SWNT FET fabrication achievable. P-type and n-type passivated SWNT FETs have been realized through dopant-selective nanotube coatings, which enables the fabrication of active circuits based on complementary device structures.
Golovchenko Jene A.
Peng Haibing
No associations
LandOfFree
Coaxial p- and n-type carbon nanotube transistors with dopant-selective coatings does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.
If you have personal experience with Coaxial p- and n-type carbon nanotube transistors with dopant-selective coatings, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Coaxial p- and n-type carbon nanotube transistors with dopant-selective coatings will most certainly appreciate the feedback.
Profile ID: LFWR-SCP-O-404726